How do you calculate the output of a transistor?
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How do you calculate the output of a transistor?
Determine the voltage drop between the collector and emitter junctions (Vce) of the transistor using the formula Vce = Vcc – IcRc, where “Vce” is the collector emitter voltage; “Vcc” is the supply voltage; and “IcRc” is the voltage drop across the base resistor (Rb).
How is ICQ and VCEQ calculated?
We need to find equivalent circuit at base terminal (Rth & Vth)….Answers:
- Icq=2.142mA.
- Vceq=4.852V.
- VC=5.716V.
- VE=0.864V.
What is VCE?
The Victorian Certificate of Education (VCE) is the certificate that the majority of students in Victoria receive on satisfactory completion of their secondary education. The VCE provides diverse pathways to further study or training at university or TAFE and to employment.
Where is VB in electronics?
- Vb = VccR2R1+R2 and.
- That is valid if R1R2R1+R2 << βRe.
- Rx = R1R2R1+R2.
- V1 = VccR2R1+R2.
What is the VBE of a transistor?
VBE is approximately 0.7V for a silicon transistor. For a germanium transistor (which is more rare), VBE is approximately 0.3V. VBE is important when doing DC analysis of a transistor circuit because it is used for calculations to find the transistor’s DC values.
Why is V be important when doing DC analysis of a transistor?
V BE is important when doing DC analysis of a transistor circuit because it is used for calculations to find the transistor’s DC values. One of the most important calculations it is used for is to find the quiescent current of the transistor, I EQ. I EQ can then be used to find other values in the circuit such as V CEQ or I B .
What is the voltage between base and emitter in a transistor?
VBE is the voltage that falls between the base and emitter of a bipolar junction transistor. VBE is approximately 0.7V for a silicon transistor. For a germanium transistor (which is more rare), VBE is approximately 0.3V.
What is the V be of a bipolar junction transistor?
V BE is the voltage that falls between the base and emitter of a bipolar junction transistor. V BE is approximately 0.7V for a silicon transistor. For a germanium transistor (which is more rare), V BE is approximately 0.3V.