What is hFE value of a transistor?

hFE of a transistor is the current gain or amplification factor of a transistor. hFE (which is also referred to as β) is the factor by which the base current is amplified to produce the amplified current of the transistor.

How do you calculate hFE?

The common-emitter DC gain (base-to-collector current gain, hFE) is calculated by hFE = IC/IB with VCE at a constant voltage. hFE is also called βF, the forward DC current gain. It is often simply written as β, and is usually in the range of 10 to 500 (most often near 100). hFE is affected by temperature and current.

Which transistor is used in CE amplifier?

The common emitter amplifier is a three basic single-stage bipolar junction transistor and is used as a voltage amplifier. The input of this amplifier is taken from the base terminal, the output is collected from the collector terminal and the emitter terminal is common for both the terminals.

What is the voltage gain of a transistor in CE configuration?

In a common emitter (CE) amplifier having a voltage gain G, the transistor used has transconductance 0.03 mho and current gain 25.

What is HFE in semiconductor?

hFE is an abbreviation, and it stands for “Hybrid parameter forward current gain, common emitter”, and is a measure of the DC gain of a junction transistor.

Is beta the same as HFE?

HFE is beta. It changes with each transistor even if they have the same part number because it is a range. Some transistors have a high beta and others have a low beta.

What is the difference between HFE and HFE?

hfe and HFE are two different, but related, characteristics of a bipolar transistor. hFE is the short circuit (vCE=0) forward current ratio (also known as h21) at a specified DC bias (which must be stated for each value of hFE). hfe is the small signal AC gain at a specified bias, and is frequency dependent.

How does transistor work as amplifier?

A transistor acts as an amplifier by raising the strength of a weak signal. The DC bias voltage applied to the emitter base junction, makes it remain in forward biased condition. Thus a small input voltage results in a large output voltage, which shows that the transistor works as an amplifier.

How much is the base to emitter voltage of a transistor in the on state?

If the transistor is made up of a silicon material, the base-emitter voltage VBE will be 0.7 V. If the transistor is made up of a germanium material, the base-emitter voltage VBE will be 0.3 V.

What is the collector current of a transistor with HFE 100?

So if 1mA is fed into the base of a transistor and it has a hFE of 100, the collector current will be 100mA. Every transistor has its own unique hFE. The hFE is normally seen to be a constant value, normally around 10 to 500, but it may change slightly with temperature and with changes in collector-to-emitter voltage.

What is the current gain of a transistor in CE configuration?

In CE configuration, the output resistance is high. The current gain of a transistor in CE configuration is defined as the ratio of output current or collector current (IC) to the input current or base current (IB). The current gain of a transistor in CE configuration is high.

What is the current gain and voltage gain of common emitter amplifier?

So the current gain and voltage gain of the common emitter amplifier is medium. However, the power gain is high. To fully describe the behavior of a transistor with CE configuration, we need two set of characteristics – input characteristics and output characteristics.

What does q/r/s mean in the hfe of a transistor?

This explains your question with the Q/R/S part of the hFE shown in your datasheet. The suffix your transistor has determines which hFE gain it will have, as concluded from the datasheet. Q in 2SC828AQ has a hFE of 130-260. R in 2SC828AR has a hFE of 180-360. S in 2SC828AS has a hFE of 260-520. These suffix letters are also Hfe ranks.